Evidence of deep traps in overgrown v-shaped defects in epitaxial GaN layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4816969
Reference37 articles.
1. Current Status of GaN-Based Solid-State Lighting
2. Formation Mechanism of Nanotubes in GaN
3. Pit formation in GaInN quantum wells
4. Influence of growth rate on the structure of thick GaN layers grown by HVPE
5. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
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2. The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits;Materials Science in Semiconductor Processing;2021-08
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4. Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy;Journal of Applied Physics;2017-01-07
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