Influence of growth rate on the structure of thick GaN layers grown by HVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Growth of gallium nitride by hydride vapor-phase epitaxy
2. Properties of Free-Standing GaN Bulk Crystals Grown by HVPE
3. Electronic and structural properties of GaN grown by hydride vapor phase epitaxy
4. Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence
5. Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films
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