Crucial influential factor on background electron concentration in semi-polar (112¯2) plane AlGaN epi-layers

Author:

Yang Gang,Zhang Xiong,Wu Zili,Zhao Jianguo,Nasir Abbas,Chen Shuai,Fan Aijie,Cui Yiping

Funder

Key Research and Development Project of Science and Technology Department of Jiangsu Province, People’s Republic of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire;Hirayama;Phys. Status Solidi,2009

2. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency;Takano;APEX,2017

3. Improvement in output power of 280-nm deep ultraviolet light-emitting diode by using AlGaN multi quantum wells;Fujioka;APEX,2010

4. Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells;Grandjean;J. Appl. Phys.,1999

5. Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells;Leroux;Phys. Rev. B,1998

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