Improved surface morphology and crystalline quality of semi-polar (112‾2) AlN epilayer with dual moderate-temperature-grown AlN interlayers
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification;Tang;Appl. Surf. Sci.,2020
2. High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells;Murotani;Appl. Phys. Lett.,2020
3. Growth of semi-polar (1013) AlN film on M-plane sapphire with high-temperature nitridation by HVPE;Li;Materials,2021
4. Effects of an in-situ SiNx interlayer on structural and optical properties for nonpolar a-plane GaN epilayers;Zhao;Jpn. J. Appl. Phys.,2020
5. Electrical properties of (1122) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy;Foronda;Appl. Phys. Lett.,2020
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1. Semipolar (11–22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes;Crystal Growth & Design;2024-04-19
2. Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature;Materials;2023-11-30
3. Enhanced structural and optical properties of semipolar (112¯2) AlGaN film with insertion of AlN/AlGaN superlattice;Journal of Vacuum Science & Technology A;2023-07-26
4. Effects of Dual Moderate-Temperature-Grown AIN Interlayers on Structural and Optical Properties of Semipolar (1122) AIN Film;Materials Science Forum;2023-05-31
5. Influences of nitridation treatment on the properties of semi-polar (11 2‾2) plane AlGaN films;Materials Science in Semiconductor Processing;2022-11
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