Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371241
Reference24 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
3. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
4. Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells
5. Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells
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