Temperature dependence analysis of intersubband absorption in asymmetric ZnO/MgZnO quantum wells: Potential for terahertz emission applications-Reference-Cited by-同舟云学术

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Temperature dependence analysis of intersubband absorption in asymmetric ZnO/MgZnO quantum wells: Potential for terahertz emission applications

Published:2024-11 Issue: Volume:275 Page:120727
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Moudou L’houcine,AL-Hattab Mohamed^ORCID,Rahmani Khalid,Oublal Essaadia,Maouhoubi Ibrahim,Bajjou Omar,Guerroum Jamal,Chrafih Younes

Publisher

Elsevier BV

Reference28 articles.

1. A comprehensive review of ZnO materials and devices;Özgür;J. Appl. Phys.,2005

2. The roles of structural imperfections in InGaN-based blue light- emitting diodes and laser diodes;Nakamura;Science,1998

3. Group III-nitride based hetero and quantum structures;Monemar;Prog. Quant. Electron.,2000

4. When group-III nitrides go infrared: new properties and perspectives;Wu;J. Appl. Phys.,2009

5. Etude des nanostructures laser à base de ZnO/MgZnO;Benharrats,2007

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