Group III-nitride based hetero and quantum structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Statistical and Nonlinear Physics
Reference144 articles.
1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
2. Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers
3. Properties of Zn‐doped GaN. I. Photoluminescence
4. Fundamental energy gap of GaN from photoluminescence excitation spectra
5. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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