Chemical understanding and utility of H3PO4etching of group-III- nitrides
Author:
Affiliation:
1. Infineon Technologies Austria AG; Siemensstr. 2-5 9500 Villach Austria
2. Infineon Technologies AG; Am Campeon 1-12 85579 Neubiberg Germany
3. Institute of Chemistry and CINSaT; University of Kassel; Heinrich-Plett-Str. 40 34132 Kassel Germany
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Wet etching of GaN, AlN, and SiC: a review
2. Wet chemical etching of AlN
3. Dislocation Etch Pits in GaN Epitaxial Layers Grown on Sapphire Substrates
4. Orthodox etching of HVPE-grown GaN
5. Selective etching of dislocations in GaN and quantitative SEM analysis with shape-reconstruction method
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