Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride Layers-Reference-Cited by-同舟云学术

Molten Barium Hydroxide as Defect Selective Drop Etchant for Dislocation Analysis on Aluminum Nitride Layers

Published:2022-02-03 Issue:7 Volume:219 Page:2100707
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Matiwe Lucinda¹,Hartmann Carsten¹,Cancellara Leonardo¹,Bickermann Matthias¹,Klump Andrew¹,Wollweber Jürgen¹,Hagedorn Sylvia²,Weyers Markus²,Straubinger Thomas¹^ORCID

Affiliation:

1. Leibniz-Institut für Kristallzüchtung (IKZ) Max-Born-Straße 2 D-12489 Berlin Germany

2. Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik Gustav-Kirchhoff-straße 4 D-12489 Berlin Germany

Funder

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100707

Reference35 articles.

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4. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

5. AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs

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