Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness-Reference-Cited by-同舟云学术

Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness

Published:2020 Issue:68 Volume:10 Page:41443-41452
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Jia Zhigang¹²³⁴⁵^ORCID,Hao Xiaodong⁶⁷⁸⁵^ORCID,Lu Taiping¹²³⁴⁵,Dong Hailiang¹²³⁴⁵,Jia Zhiwei⁹²³⁴⁵,Ma Shufang⁶⁷⁸⁵,Liang Jian¹²³⁴⁵,Jia Wei¹²³⁴⁵,Xu Bingshe¹²³⁴⁵

Affiliation:

1. Key Laboratory of Interface Science and Engineering in Advanced Materials

2. Taiyuan University of Technology

3. Ministry of Education

4. Taiyuan 030024

5. China

6. Institute of Atomic and Molecular Science

7. Shanxi University of Science and Technology

8. Xi'an 710021

9. Key Laboratory of Advanced Transducers and Intelligent Control System

Abstract

High-density V-shaped pits cause that InGaN/GaN multi-quantum well becomes QD/QW hybrid structure, and the internal quantum efficiency of the hybrid structure is improved by increasing the thickness of GaN barrier.

Funder

Natural Science Foundation of Shanxi Province

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA05566B

Reference45 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures