Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer-Reference-Cited by-同舟云学术

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Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer

Published:2013-07 Issue:4 Volume:19 Page:1500705-1500705
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Feng Mei-Xin,Liu Jian-Ping,Zhang Shu-Ming,Jiang De-Sheng,Li Zeng-Cheng,Li De-Yao,Zhang Li-Qun,Wang Feng,Wang Hui,Yang Hui

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/2944/6514904/06399511.pdf?arnumber=6399511

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells;Optics Letters;2024-02-28

2. Continuous-Wave Current Injected InGaN/GaN Microdisk Laser on Si(100);ACS Photonics;2022-10-28

3. Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN–GaN–InGaN barriers;Journal of Applied Physics;2021-11-14

4. Design and growth of GaN-based blue and green laser diodes;Science China Materials;2020-03-18

5. Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness;RSC Advances;2020

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