Realization of InGaN laser diodes above 500 nm by growth optimization of the InGaN/GaN active region
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=11/a=111001/pdf
Reference18 articles.
1. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate
2. True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN
3. Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates
4. High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates
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