Abstract
Optical properties of wurtzite violet InGaN/GaN quantum well (QW) structures, with the same well-plus-barrier thickness, grown by metal-organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates, were investigated using temperature-dependent photoluminescence (TDPL) and excitation-power-dependent photoluminescence (PDPL). Two samples were compared: one had a thicker well (InGaN/GaN 3/5 nm); the other had a thicker barrier (InGaN/GaN 2/6 nm). It was found that the GaN barrier thickness in the InGaN/GaN MQWs plays an important role in determining the optical characteristics of the MQWs. The peak energy of the two samples varied with temperature in an S-shape. The thicker-barrier sample had a higher turning point from blueshift to redshift, indicating a stronger localization effect. From the Arrhenius plot of the normalized integrated PL intensity, it was found that the activation energy of the nonradiative process also increased with a thicker barrier thickness. The radiation recombination process was dominated in the sample of the thicker barrier, while the non-radiation process cannot be negligible in the sample of the thicker well.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Cited by
4 articles.
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