Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy-Reference-Cited by-同舟云学术

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Published:2017-01-07 Issue:1 Volume:121 Page:015701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hsiao F.-M.¹²,Schnedler M.²,Portz V.²,Huang Y.-C.³,Huang B.-C.⁴,Shih M.-C.¹,Chang C.-W.¹,Tu L.-W.¹,Eisele H.⁵,Dunin-Borkowski R. E.²,Ebert Ph.²^ORCID,Chiu Y.-P.¹⁴⁶

Affiliation:

1. Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan

2. Peter Grünberg Institut, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

3. Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan

4. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan

5. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

6. Department of Physics, National Taiwan University, Taipei 10617, Taiwan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4972563

Reference38 articles.

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4. GaN-based light-emitting diodes on various substrates: a critical review

5. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

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