Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM-Reference-Cited by-同舟云学术

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Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM

Published:2018-09-02 Issue:34 Volume:98 Page:3072-3085
ISSN:1478-6435
Container-title:Philosophical Magazine
language:en
Short-container-title:Philosophical Magazine

Author:

Zhang Lei¹²,Portz Verena¹³,Schnedler Michael¹,Jin Lei⁴,Wang Yuhan¹,Hao Xiaopeng²,Eisele Holger⁵,Dunin-Borkowski Rafal E¹⁴,Ebert Philipp¹^ORCID

Affiliation:

1. Peter Grünberg Institut, Forschungszentrum Jülich GmbH, Jülich, Germany

2. State Key Laboratory of Crystal Materials, Shandong University, Jinan, People's Republic of China

3. Department of Physics, National Taiwan University, Taipei, Taiwan

4. Ernst Ruska-Centrum, Forschungszentrum Jülich GmbH, Jülich, Germany

5. Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany

Funder

Office of the China Postdoctoral Council (OCPC) of the Ministry of Human Resources and Social Security (MoHRSS)

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

https://www.tandfonline.com/doi/pdf/10.1080/14786435.2018.1516899

Reference43 articles.

1. Epitaxial challenges of GaN on silicon

2. Recent Progress in GaN-Based Light-Emitting Diodes

3. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN

4. Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system

5. Self-generated microcracks in an ultra-thin AlN/GaN superlattice interlayer and their influences on the GaN epilayer grown on Si(110) substrates by metal–organic chemical vapor deposition

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces;Journal of Vacuum Science & Technology A;2024-01-29

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