Self-generated microcracks in an ultra-thin AlN/GaN superlattice interlayer and their influences on the GaN epilayer grown on Si(110) substrates by metal–organic chemical vapor deposition-Reference-Cited by-同舟云学术

Self-generated microcracks in an ultra-thin AlN/GaN superlattice interlayer and their influences on the GaN epilayer grown on Si(110) substrates by metal–organic chemical vapor deposition

Published:2015 Issue:27 Volume:17 Page:5014-5018
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Shen Xu-Qiang¹²³,Takahashi Tokio¹²³,Matsuhata Hirofumi¹²³,Ide Toshihide¹²³,Shimizu Mitsuaki¹²³

Affiliation:

1. Advanced Power Electronics Research Center

2. National Institute of Advanced Industrial Science and Technology (AIST)

3. Tsukuba-shi, Japan

Abstract

We investigated the effect of an ultra-thin AlN/GaN superlattice interlayer (SL IL) on the GaN epilayer grown on Si(110) substrates by metal–organic chemical vapor deposition (MOCVD).

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CE/C5CE00929D

Reference25 articles.

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4. Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

5. Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)

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