Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system-Reference-Cited by-同舟云学术

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Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system

Published:2014-12-08 Issue:23 Volume:105 Page:232113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kadir Abdul¹,Huang Chieh Chih¹,Kian Lee Kenneth Eng¹,Fitzgerald Eugene A.²,Chua Soo Jin³

Affiliation:

1. Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602

2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

3. National University of Singapore, Engineering Drive 3, Singapore 117576

Funder

National Research Foundation-Prime Minister's office, Republic of Singapore (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904007

Reference14 articles.

1. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

2. X-ray diffraction of III-nitrides

3. High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition

4. A New Approach for Determining Epilayer Strain Relaxation and Composition Through High Resolution X-Ray Diffraction

5. Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps

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1. The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111);Micromachines;2024-04-16

2. High‐Performance AlGaN‐Based Solar‐Blind UV Photodetectors for Sensing Applications;physica status solidi (a);2021-07-30

3. Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures;Japanese Journal of Applied Physics;2019-08-27

4. Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD;ACS Applied Electronic Materials;2019-07-19

5. Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs;Journal of Crystal Growth;2019-07

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