High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition

Published:2011-02 Issue:5 Volume:509 Page:2227-2231
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Xiang R.F.,Fang Y.-Y.,Dai J.N.,Zhang L.,Su C.Y.,Wu Z.H.,Yu C.H.,Xiong H.,Chen C.Q.,Hao Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference26 articles.

1. GaN-based optoelectronics on silicon substrates

2. The origin of stress reduction by low-temperature AlN interlayers

3. GaN Schottky barrier photodiode on Si (111) with low-temperature-grown cap layer

4. The growth of III–V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy

5. Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)

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