Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2430396
Reference8 articles.
1. GaN-based epitaxy on silicon: stress measurements
2. The origin of stress reduction by low-temperature AlN interlayers
3. Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si
4. Stress evolution during metalorganic chemical vapor deposition of GaN
5. Strain evolution in GaN layers grown on high-temperature AlN interlayers
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1. Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition;Japanese Journal of Applied Physics;2017-12-14
2. Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures;Semiconductor Science and Technology;2016-09-20
3. Effect of double superlattice interlayers on growth of thick GaN epilayers on Si(110) substrates by metalorganic chemical vapor deposition;Japanese Journal of Applied Physics;2016-04-01
4. A low-temperature AlN interlayer to improve the quality of GaN epitaxial films grown on Si substrates;CrystEngComm;2016
5. High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer;CrystEngComm;2016
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