Author:
Ma Jinbang,Zhang Yachao,Zhang Tao,Li Yifan,Yao Yixin,Feng Qian,Bi Zhen,Zhang Jincheng,Hao Yue
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference37 articles.
1. 30-W/mm GaN HEMTs by field plate optimization;Wu;IEEE Electron. Device Lett.,2004
2. Very-high power density AlGaN/GaN HEMTs;Yi-Feng;IEEE Trans. Electron. Dev.,2001
3. Research on epitaxial of 250 nm high quality GaN HEMT based on AlN surface leveling technology;Zhang;Appl. Surf. Sci.,2020
4. Stress study of GaN grown on serpentine-channels masked Si (111) substrate by MOCVD, Superlattice;Wei;Micro,2019
5. Diffusion at AlN/Si interface and its suppression through substrate nitridation;Wei;Appl. Phys. Lett.,2020
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献