β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination-Reference-Cited by-同舟云学术

β-Ga₂O₃ Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination

Published:2022-11-14 Issue:20 Volume:121 Page:203501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dhara Sushovan¹^ORCID,Kalarickal Nidhin Kurian¹^ORCID,Dheenan Ashok¹^ORCID,Joishi Chandan¹,Rajan Siddharth¹²

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Abstract

In this work, we demonstrate a deep mesa etch design for efficient edge field termination in β-Ga2O3 Schottky barrier diodes (SBDs). The proposed design enabled parallel plate fields higher than 4.1 MV/cm with negligible change to the device ON characteristics. The effect of BCl3/Cl2-based dry etch on (100) and (010) etched vertical sidewalls is also analyzed. A remarkable anisotropy in depletion was observed for etch along (100) and (010) sidewalls. This work provides insight into the impact of etching on n-type Ga2O3 and shows a promising method to realize efficient field termination for high breakdown field strength SBDs.

Funder

Air Force Office of Scientific Research

National Nuclear Security Administration

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0123284

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