600 V/7 A Large-Size RESURF β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode With High-Temperature Storage Test-Reference-Cited by-同舟云学术

600 V/7 A Large-Size RESURF β-Ga₂O₃ Schottky Barrier Diode With High-Temperature Storage Test

Published:2024-02 Issue:2 Volume:71 Page:1320-1324
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wei Yuxi¹^ORCID,Luo Xiaorong¹^ORCID,Wang Yuangang²^ORCID,Peng Xiaosong¹,Hao Linyao¹,Zhao Kai¹,Wei Jie¹^ORCID,Li Xiangnan¹,Jiang Zhuolin¹^ORCID,Dun Shaobo²,Feng Zhihong²^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

2. National Key Laboratory of Solid-State Microwave Devices and Circuits, Hebei Semiconductor Research Institute, Shijiazhuang, China

Funder

Fundamental Strengthening Program Key Basic Research Project

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10413236/10360432.pdf?arnumber=10360432

Reference29 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Breakdown Characteristics of $\beta$ -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors

3. Influence of metal choice on (010) β-Ga2O3Schottky diode properties

4. Design and optimization of β-Ga2O3 on (h-BN layered) sapphire for high efficiency power transistors: A device-circuit-package perspective;Mahajan

5. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review of β-Ga2O3 Power Diodes;Materials;2024-04-18