Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3262964
Reference21 articles.
1. 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire
2. Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal–organic chemical vapour deposition
3. Lateral phase separation in AlGaN grown on GaN with a high-temperature AlN interlayer
4. Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm
5. Device self-heating effects in deep UV LEDs studied by systematic variation in pulsed current injection
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