226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference13 articles.
1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
2. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers
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4. Submilliwatt operation of AlGaN-based ultraviolet light-emitting diode using short-period alloy superlattice
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