Lateral phase separation in AlGaN grown on GaN with a high-temperature AlN interlayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2056588
Reference14 articles.
1. Emerging gallium nitride based devices
2. Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures
3. Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer
4. Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers
5. Influence of alloy composition and interlayer thickness on twist and tilt mosaic in AlxGa1−xN/AlN/GaN heterostructures
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