Lateral phase separation in AlGaN grown on GaN with a high-temperature AlN interlayer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2056588
Reference14 articles.
1. Emerging gallium nitride based devices
2. Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures
3. Control of Dislocations and Stress in AlGaN on Sapphire Using a Low Temperature Interlayer
4. Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers
5. Influence of alloy composition and interlayer thickness on twist and tilt mosaic in AlxGa1−xN/AlN/GaN heterostructures
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1. Nanoscale phase separation on an AlGaN surface characterized by scanning diffusion microscopy;Optics Express;2023-04-20
2. Observation of threading dislocations and misfit dislocation half-loops in GaN/AlGaN heterostructures grown on Si using electron channeling contrast imaging;Journal of Applied Physics;2022-09-14
3. Monolayer‐Range Compositional Modulations in Al x Ga 1− x N ( x = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux;physica status solidi (a);2022-01-27
4. Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200 mm diameter silicon substrates using metal-organic chemical vapor deposition;Semiconductor Science and Technology;2020-11-20
5. Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer;CrystEngComm;2020
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