Influence of alloy composition and interlayer thickness on twist and tilt mosaic in AlxGa1−xN/AlN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1637717
Reference11 articles.
1. Critical issues in AlxGa1−xN growth
2. High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
3. Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors
4. Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
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2. Structural and optical properties of Al x Ga 1−x N (0.33 ≤ x ≤ 0.79) layers on high-temperature AlN interlayer grown by metal organic chemical vapor deposition;Superlattices and Microstructures;2017-01
3. Development of bi-axial preferred orientation in epitaxial NiMnGa thin films and its consequence on magnetic properties;Acta Materialia;2016-07
4. Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD;Applied Physics A;2013-08-14
5. Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition;Journal of Crystal Growth;2012-03
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