Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes-Reference-Cited by-同舟云学术

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Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes

Published:2000-05-01 Issue:Part 2, No. 5A Volume:39 Page:L387-L389
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Pernot Cyril,Hirano Akira,Iwaya Motoaki,Detchprohm Theeradetch,Amano Hiroshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 122 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrahigh-Sensitivity and Fast-Speed Solar-Blind Ultraviolet Photodetector Based on a Broken-Gap van der Waals Heterodiode;ACS Applied Materials & Interfaces;2023-03-13

2. Ga2O3/GaN-based solar-blind phototransistors fabricated using a thermal oxidation process performed on the GaN p-n junction layers;Journal of Alloys and Compounds;2023-02

3. High-Temperature Forward and Reverse Current Transport Mechanisms of AlGaN-Based Solar-Blind UV Photodetector;IEEE Transactions on Electron Devices;2022-12

4. Zinc oxide family semiconductors for ultraviolet radiation emission – A cathodoluminescence study;Materials Research Bulletin;2022-09

5. Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure;Japanese Journal of Applied Physics;2022-04-28

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