Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition-Reference-Cited by-同舟云学术

Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition

Published:2012-03 Issue:1 Volume:343 Page:110-114
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Xue JunShuai,Zhang JinCheng,Zhang Wei,Li Liang,Meng FanNa,Lu Ming,Ning Jing,Hao Yue

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. An insulator-lined silicon substrate-via technology with high aspect ratio

2. 30-W/mm GaN HEMTs by Field Plate Optimization

3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

4. Characterization of different-Al-content Al[sub x]Ga[sub 1−x]N/GaN heterostructures and high-electron-mobility transistors on sapphire

5. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Current Driven Bidirectional Ultraviolet Light Emitting Diodes Based on Au/I-Aln/P-Gan Mis Heterojunction;2024

2. Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM;AIP Advances;2023-01-01

3. Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode;Optics & Laser Technology;2022-12

4. Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer;IEEE Transactions on Electron Devices;2019-07

5. Variational study of the 2DEG wave function in InAlN/GaN heterostructures;Acta Physica Sinica;2018