Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. An insulator-lined silicon substrate-via technology with high aspect ratio
2. 30-W/mm GaN HEMTs by Field Plate Optimization
3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
4. Characterization of different-Al-content Al[sub x]Ga[sub 1−x]N/GaN heterostructures and high-electron-mobility transistors on sapphire
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1. Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM;AIP Advances;2023-01-01
2. Optimization of growth parameters of AlN thin films and investigation of electrical and electroluminescence characteristics from Au/i-AlN/n-GaN UV light-emitting diode;Optics & Laser Technology;2022-12
3. Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer;IEEE Transactions on Electron Devices;2019-07
4. Variational study of the 2DEG wave function in InAlN/GaN heterostructures;Acta Physica Sinica;2018
5. Unintentional incorporation of Ga in the nominal AlN spacer of AlInGaN/AlN/GaN Heterostructure;Journal of Physics D: Applied Physics;2017-12-27
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