Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm-Reference-Cited by-同舟云学术

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Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

Published:2002-10-28 Issue:18 Volume:81 Page:3491-3493
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chitnis A.,Sun J.,Mandavilli V.,Pachipulusu R.,Wu S.,Gaevski M.,Adivarahan V.,Zhang J. P.,Khan M. Asif,Sarua A.,Kuball M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1518155

Reference13 articles.

1. Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

2. Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers

3. Room Temperature 339 nm Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire Substrate

4. High-Efficiency GaN/AlxGa1?xN Multi-Quantum-Well Light Emitter Grown on Low-Dislocation Density AlxGa1?xN

5. Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells

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1. A Review of Light-Emitting Diodes and Ultraviolet Light-Emitting Diodes and Their Applications;Photonics;2024-05-22

2. Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes;Advanced Electronic Materials;2024-03-09

3. Enhanced light output power from AlGaN-based deep ultraviolet LEDs achieved by a four-in-one mesa structure;Applied Physics Letters;2023-07-31

4. Reliability Analysis of AlGaN-Based Deep UV-LEDs;Nanomaterials;2022-10-24

5. A Critical Review on the Junction Temperature Measurement of Light Emitting Diodes;Micromachines;2022-09-27

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