Affiliation:
1. National Innovation Platform for the Fusion of Industry and Education in Integrated Circuits, Department of Electronic Science, School of Electronic Science and Engineering, Xiamen University , Xiamen 361005, China
Abstract
This study aimed to investigate the impact of mesa geometry on the light output characteristics of AlGaN-based 275 nm deep ultraviolet light-emitting diodes (DUV-LEDs). By dividing the original single-junction mesa into four parts and connecting them serially (four-in-one), high-voltage (HV) DUV-LEDs with rectangular, hexagonal, circular, triangular, and square submesas were realized, achieving significant enhancement of the light output power (LOP) and wall-plug efficiency (WPE). The LOP of HV DUV-LEDs with hexagonal submesas has been promoted substantially compared to that of the original DUV-LEDs. Among the investigated five different types of submesas, hexagonal-type HV DUV-LEDs can achieve the highest LOP and WPE due to the higher sidewall light extraction. Furthermore, it is also demonstrated that pulse current driving can reduce the self-heating effect of HV DUV-LEDs.
Funder
National Natural Science Foundation of China
Major Science and Technology Project of Fujian Provience
Natural Science Foundation of Fujian Province
XMU Training Program of Innovation and Entrepreneurship for Undergraduates
Key Research and Industrialization Projects of Technological Innovation of Fujian Provience
Science and Technology Project of Xiamen City
Fundamental Research Funds for the Central Universities
Subject
Physics and Astronomy (miscellaneous)
Cited by
2 articles.
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