Numerical analysis of the influence of sidewall defects on AlGaN-based deep ultraviolet micro-light emitting diodes-Reference-Cited by-同舟云学术

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Numerical analysis of the influence of sidewall defects on AlGaN-based deep ultraviolet micro-light emitting diodes

Published:2024-11 Issue: Volume:67 Page:101-106
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Ma Zhanhong^ORCID,Ji Yue,Hu Tiangui,Sun Xuejiao,Liu Naixin

Publisher

Elsevier BV

Reference37 articles.

1. A critical review on ultraviolet disinfection systems against COVID-19 outbreak: applicability, validation, and safety considerations;Raeiszadeh;ACS Photonics,2020

2. Effects of number of quantum wells and Shockley–Read–Hall recombination in deep-ultraviolet light-emitting diodes;Chen;Opt Lett.,2020

3. The emergence and prospects of deep-ultraviolet light-emitting diode technologies;Kneissl;Nat. Photonics,2019

4. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes;Li;Light Sci. Appl.,2021

5. Analysis of the efficiency improvement of 273 nm AlGaN UV-C micro-LEDs;Qian;J. Phys. Appl. Phys.,2022

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