Effects of number of quantum wells and Shockley–Read–Hall recombination in deep-ultraviolet light-emitting diodes
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
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1. Band parameters for nitrogen-containing semiconductors
2. Carrier Recombination at Screw Dislocations in n-Type AlGaN Layers
3. Characterization of threading dislocations in GaN epitaxial layers
4. Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
5. Numerical Investigation on the Carrier Transport Characteristics of AlGaN Deep-UV Light-Emitting Diodes
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1. Numerical analysis of the influence of sidewall defects on AlGaN-based deep ultraviolet micro-light emitting diodes;Current Applied Physics;2024-11
2. Dual polarization for efficient III-nitride-based deep ultraviolet micro-LEDs;Scientific Reports;2024-08-02
3. High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes;IEEE Electron Device Letters;2023-07
4. Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light-emitting diodes with locally embedded p-i-n junctions;Applied Optics;2022-08-11
5. Performance enhancement of an N-polar nitride deep-ultraviolet light-emitting diode with compositionally graded p-AlGaN;Optics Letters;2022-01-14
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