Theoretical study of Cl-related defect complexes in cubic SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4718030
Reference25 articles.
1. Halogen impurities in silicon: Shallow single donors
2. DFT study of halogen impurity in diamond
3. Possible n-type dopants in diamond and amorphous carbon
4. 4H SiC Epitaxial Growth with Chlorine Addition
5. Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
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1. Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels;Journal of Applied Physics;2024-05-17
2. Chlorine vacancy in 4H−SiC : An NV-like defect with telecom-wavelength emission;Physical Review B;2023-12-07
3. Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry;Physica B: Condensed Matter;2018-04
4. Point defects in Ga-implanted SiC: Experiment and theory;Journal of Applied Physics;2017-06-28
5. First-principles study of Cl diffusion in cubic SiC;Journal of Applied Physics;2013-04-07
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