First-principles study of Cl diffusion in cubic SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4799194
Reference26 articles.
1. 4H SiC Epitaxial Growth with Chlorine Addition
2. Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
3. Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
4. Microstructure of SiC deposited from methyltrichlorosilane
5. Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC
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1. The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes;Journal of Applied Physics;2024-06-17
2. Deep Level Reduction in 4H-SiC Treated by Plasma Immersion;Solid State Phenomena;2023-05-25
3. The effects of 167 MeV Xe26+ swift heavy ions irradiation on chemical vapour deposited silicon carbide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-09
4. Kick-out diffusion of Al in 4H-SiC: an ab initio study;Journal of Applied Physics;2022-07-07
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