Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)-Reference-Cited by-同舟云学术

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Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)

Published:2008-05-15 Issue:4 Volume:2 Page:188-190
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:phys. stat. sol. (RRL)

Author:

Pedersen H.,Leone S.,Henry A.,Darakchieva V.,Carlsson P.,Gällström A.,Janzén E.

Funder

Swedish Foundation for Strategic Research

Swedish Research Council

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.200802081/fullpdf

Reference16 articles.

1. 4H SiC Epitaxial Growth with Chlorine Addition

2. High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition

3. SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

4. Epitaxial growth and characterization of silicon carbide films

5. Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

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1. The investigation of initial decomposition paths of methyltrichlorosilane on (0001) and (0001¯) surfaces of 4H-SiC: A DFT study;Surface Science;2024-06

2. Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System;Materials;2022-05-25

3. Epitaxial growth of β-Ga₂O₃ by hot-wall MOCVD;AIP Advances;2022-05-01

4. Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations;Crystal Growth & Design;2019-05-15

5. Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry;Physica B: Condensed Matter;2018-04

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