Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations
Author:
Affiliation:
1. Department of Physics, Chemistry and Biology. IFM Linköping University, SE-581 83 Linköping, Sweden
Funder
Energimyndigheten
Link?pings Universitet
Horizon 2020 Framework Programme
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.9b00141
Reference32 articles.
1. Bulk Growth of Large Area SiC Crystals
2. Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices
3. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
4. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
5. Properties and origins of different stacking faults that cause degradation in SiC PiN diodes
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3. Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching;Crystals;2022-05-30
4. The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers;physica status solidi (b);2022-01-22
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