Kinetic Monte Carlo simulation study of the early stages of epitaxial SiC (0001) growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
1. T. Kimoto, High-voltage SiC Power Devices for Improved Energy Efficiency, Proceedings of the Japan Academy, Series B, 98 (2022) 161-189.
2. Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations;Ul Hassan;Cryst. Growth Des.,2019
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4. Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers;Masumoto;Materials,2020
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