Deep Level Reduction in 4H-SiC Treated by Plasma Immersion

Abstract

The carbon vacancy (VC) is a lifetime-killer defect that hinders the correct functionality of 4H-SiC bipolar devices. Until now, different methods based on carbon interstitial injection, have been proposed, in order to reduce its concentration. However, if on one hand these methods effectively reduce the VC concentration in the epilayer, on the other they cannot prevent the re-generation of VC occurring during the manufacture of a p-i-n diode, e.g., p+ implantation and activation. In the following contribution, we employ PIII of B for the formation of the anode for a p-i-n diode. We show that by PIII, it is possible to simultaneously form a p+n junction with a low concentration of VC in the drift layer.