Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4754854
Reference34 articles.
1. 4H SiC Epitaxial Growth with Chlorine Addition
2. Thick Epitaxial Layers Growth by Chlorine Addition
3. Very High Growth Rate Epitaxy Processes with Chlorine Addition
4. Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
5. Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)
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1. Chlorine vacancy in 4H−SiC : An NV-like defect with telecom-wavelength emission;Physical Review B;2023-12-07
2. Correlations between reverse bias leakage current, cathodoluminescence intensity and carbon vacancy observed in 4H-SiC junction barrier Schottky diode;Semiconductor Science and Technology;2023-10-10
3. Suppression of the Carbon Vacancy Traps and the Corresponding Leakage Current Reduction in 4H-SiC Diodes by Low-Temperature Implant Activation in Combination With Oxidation;IEEE Electron Device Letters;2023-04
4. Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC;physica status solidi (b);2022-09-23
5. Performance-Improved Vertical Ni/SiO₂/4H-SiC Metal–Oxide–Semiconductor Capacitors for High-Resolution Radiation Detection;IEEE Transactions on Nuclear Science;2022-08
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