Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1522133
Reference10 articles.
1. A comparison of commercial sources of epitaxial material for GaN HFETs fabrication
2. Direct evidence for defect conduction at interface between gallium nitride and sapphire
3. Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy
4. Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
5. Properties of carbon-doped GaN
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2. Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices;Journal of Applied Physics;2020-06-07
3. Extremely Slow Decay of Yellow Luminescence in Be-Doped GaN and Its Identification;physica status solidi (b);2018-08-13
4. Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites;Physical Review Letters;2017-11-09
5. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates;Journal of Crystal Growth;2016-12
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