A comparison of commercial sources of epitaxial material for GaN HFETs fabrication-Reference-Cited by-同舟云学术

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A comparison of commercial sources of epitaxial material for GaN HFETs fabrication

Published:2001-09 Issue:3-4 Volume:230 Page:569-572
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wallis R.H.,Davies R.A.,Jones S.K.,Beanland R.,Phillips W.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference1 articles.

1. J.C. Zopler, IEDM Technical Digest, IEEE, Washington 1999 pp. 389–392.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlation of electronic and structural properties of MBE‐grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth;physica status solidi (c);2005-04-11

2. AlxGa1−xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier;Journal of Crystal Growth;2005-03

3. Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures;Applied Physics Letters;2004-10-25

4. Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs;Journal of Crystal Growth;2003-04

5. Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping;Applied Physics Letters;2002-11-11

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