Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1808496
Reference19 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Microstructure of GaN epitaxy on SiC using AlN buffer layers
3. Initial stage of aluminum nitride film growth on 6H‐silicon carbide by plasma‐assisted, gas‐source molecular beam epitaxy
4. Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy;Journal of Applied Physics;2023-09-08
2. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates;Journal of Crystal Growth;2016-12
3. MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03
4. Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures;Journal of Materials Research;2013-04-24
5. Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy;Applied Physics Letters;2012-07-16
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3