Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1484553
Reference15 articles.
1. Substrate‐polarity dependence of metal‐organic vapor‐phase epitaxy‐grown GaN on SiC
2. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers
3. Correlation between nucleation layer structure, dislocation density, and electrical resistivity for GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy
4. The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films
5. The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys
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1. Tunable infrared surface phonon–plasmon coupling in graphene-integrated polar semiconductor heterostructure;APL Photonics;2023-12-01
2. Growth of high quality GaN on (0001) 4H-SiC with an ultrathin AlN nucleation layer;Journal of Crystal Growth;2023-04
3. High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics;Materials Science and Engineering: B;2022-04
4. The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures;International Journal of Innovative Engineering Applications;2021-04-16
5. Microstructural Characterization of GaN Grown on SiC;MICROSC MICROANAL;2019
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