Correlation between nucleation layer structure, dislocation density, and electrical resistivity for GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

Correlation between nucleation layer structure, dislocation density, and electrical resistivity for GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy

Published:2001-12-24 Issue:26 Volume:79 Page:4322-4324
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Twigg M. E.,Koleske D. D.,Wickenden A. E.,Henry R. L.,Binari S. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1428769

Reference15 articles.

1. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

2. Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN

3. The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys

4. Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a-plane sapphire

5. Trapping effects and microwave power performance in AlGaN/GaN HEMTs

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