Effect of H Plasma Treatment of the Nucleation Layer on AlN Epitaxy in Microwave Plasma Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Effect of H Plasma Treatment of the Nucleation Layer on AlN Epitaxy in Microwave Plasma Chemical Vapor Deposition

Published:2023-03-14 Issue:4 Volume:23 Page:2257-2263
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Xing Yanhui¹,Dong Shengyuan¹²^ORCID,Zhang Xuan²,Zhang Yao¹,Han Jun¹,Zhang Xuemin²,Zhang Li²,Zhang Baoshun²,Zeng Zhongming²^ORCID

Affiliation:

1. Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing 100124, China

2. Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Funder

Natural Science Foundation of Beijing Municipality

National Natural Science Foundation of China

Beijing Nova Program

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c01307

Reference27 articles.

1. Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys

2. Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

3. Nucleation and growth behavior of aluminum nitride film using thermal atomic layer deposition

4. Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition

5. Influence of TMAl preflow on AlN epitaxy on sapphire

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