Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4738768
Reference21 articles.
1. 30-W/mm GaN HEMTs by Field Plate Optimization
2. Multibit Programmable Flash Memory Realized on Vertical Si Nanowire Channel
3. Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance
4. 220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs
5. Enhancement-Mode InAlN/AlN/GaN HEMTs With $ \hbox{10}^{-12}\ \hbox{A/mm}$ Leakage Current and $ \hbox{10}^{12}$ on/off Current Ratio
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