220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs-Reference-Cited by-同舟云学术

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220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Published:2011-09 Issue:9 Volume:32 Page:1215-1217
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ronghua Wang ,Guowang Li ,Verma J.,Sensale-Rodriguez B.,Tian Fang ,Jia Guo ,Zongyang Hu ,Laboutin O.,Yu Cao ,Johnson W.,Snider G.,Fay P.,Jena D.,Huili Xing

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5995811/05930326.pdf?arnumber=5930326

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