AlxGa1−xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
3. InGaN-GaN multiquantum-well blue and green light-emitting diodes
4. Nitride-based LEDs with p-InGaN capping layer
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High Al-content AlxGa1−xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy;Journal of Alloys and Compounds;2009-11
2. Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates;Journal of Crystal Growth;2009-05
3. AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates;Sensors and Actuators A: Physical;2007-04
4. Electron mobility in a modulation doped AlGaN/GaN quantum well;The European Physical Journal B;2006-02
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