Direct evidence for defect conduction at interface between gallium nitride and sapphire
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20000902?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Emerging gallium nitride based devices
2. Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
3. Electron transport mechanism in gallium nitride
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3. Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures;Applied Physics Letters;2004-10-25
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