A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers

Published:2006-05 Issue:1 Volume:291 Page:301-308
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Moon Y.T.,Xie J.,Liu C.,Fu Y.,Ni X.,Biyikli N.,Zhu K.,Yun F.,Morkoç H.,Sagar A.,Feenstra R.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Nitride Semiconductors and Devices;Morkoç,1999

2. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

3. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

4. The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy

5. GaN hexagonal microprisms with smooth vertical facets fabricated by selective metalorganic vapor phase epitaxy

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The substantial dislocation reduction by preferentially passivating etched defect pits in GaN epitaxial growth;Applied Physics Express;2019-02-15

2. High-Quality and Strain-Relaxation GaN Epilayer Grown on SiC Substrates Using AlN Buffer and AlGaN Interlayer;Chinese Physics Letters;2017-03

3. Surface morphology and crystal orientation of electrodeposited tungsten coatings with different pulse parameters;Rare Metals;2016-12-20

4. Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape;Chinese Physics B;2012-03

5. The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films;Chinese Science Bulletin;2011-08-14

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3